Linear chirp control of infrared signal in a biased semiconductor thin film

Metal-Semiconductor Interfaces in Thin-Film Transistors

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is...

ReSi2 thin-film infrared detectors

Two types of thin-film infrared-sensing devices have been investigated using the narrow band-gap semiconductor, rhenium disilicide ~Eg;0.1 eV!. These are the ReSi2/n-Si heterojunction internal photoemission ~HIP! detector and the ReSi2 thin-film photoconductor. The HIP device was found to be rectifying and to obey a Fowler-type law with a long-wavelength cutoff of ;2.1 mm ~0.59 eV! at room temp...

The surfactant effect in semiconductor thin film growth

The \ Linear " Limit of Thin Film Flowsas

Atomic Structure and Properties of Epitaxial Thin-film Semiconductor Interfaces

Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides...